vishay siliconix SUP60N10-18P document number: 65003 s09-1096-rev. a, 15-jun-09 www.vishay.com 1 n-channel 100-v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? industrial ? power supply product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 100 0.0183 at v gs = 10 v 60 48 0.023 at v gs = 8.0 v 53 t o -220ab t op v i e w gd s ordering information: SUP60N10-18P-e3 (lead (pb)-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 60 a t c = 70 c 50 pulsed drain current i dm 100 avalanche current i as 45 single avalanche energy a l = 0.1 mh e as 101 mj maximum power dissipation a t c = 25 c p d 150 b w t a = 25 c c 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 1.0
www.vishay.com 2 document number: 65003 s09-1096-rev. a, 15-jun-09 vishay siliconix SUP60N10-18P notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 100 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.015 0.0183 v gs = 10 v, i d = 15 a, t j = 125 c 0.027 0.033 v gs = 8.0 v, i d = 10 a 0.018 0.023 forward transconductance a g fs v ds = 15 v, i d = 15 a 33 s dynamic b input capacitance c iss v gs = 0 v, v ds = 50 v, f = 1 mhz 2600 pf output capacitance c oss 230 reverse transfer capacitance c rss 80 total gate charge c q g v ds = 50 v, v gs = 10 v, i d = 50 a 48 75 nc gate-source charge c q gs 16 gate-drain charge c q gd 13 gate resistance r g f = 1 mhz 0.25 1.1 2.4 tu r n - o n d e l ay t i m e c t d(on) v dd = 50 v, r l = 1.0 i d ? 50 a, v gen = 10 v, r g = 1 12 20 ns rise time c t r 10 20 turn-off delay time c t d(off) 18 35 fall time c t f 815 drain-source body diode characteristics t c = 25 c b continuous current i s 60 a pulsed current i sm 100 forward voltage a v sd i f = 15 a, v gs = 0 v 0.85 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/s 80 120 ns peak reverse recovery current i rm(rec) 4a reverse recovery charge q rr 160 240 nc
vishay siliconix SUP60N10-18P document number: 65003 s09-1096-rev. a, 15-jun-09 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance 0 20 40 60 8 0 100 012345 v gs =10 v thr u8v v gs =6 v v gs =7 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 15 30 45 60 75 0 1020304050 - transcond u ctance (s) g fs t c = 125 c t c = - 55 c t c = 25 c i d - drain c u rrent (a) c rss 0 700 1400 2100 2 8 00 3500 0204060 8 0100 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) transfer characteristics on-resistance vs. drain current gate charge 0.0 0.3 0.6 0.9 1.2 1.5 0246 8 10 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.01 0.02 0.03 0.04 0 204060 8 0 100 120 v gs = 8v v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 5 10 15 20 0204060 8 0 100 v ds = 8 0 v v ds =50 v i d =15a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 65003 s09-1096-rev. a, 15-jun-09 vishay siliconix SUP60N10-18P typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage on-resistance vs. junction temperature 0.5 1.0 1.5 2.0 2.5 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) - 50 - 25 0 25 50 75 100 125 150 175 i d = 15 a v gs = 10 v v gs = 8 v 0.00 0.02 0.04 0.06 0.0 8 0.10 4567 8 910 t j = 25 c i d =15a t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 95 100 105 110 115 120 125 130 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) source-drain diode forward voltage threshold voltage avalanche current vs. time 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 2.3 - 1. 8 - 1.3 - 0. 8 - 0.3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperat u re (c) t a v (s) (a) i da v 100 10 1 t j = 25 c t j = 150 c 10 -3 10 -2 1 10 -1 10 -4 10 -5
vishay siliconix SUP60N10-18P document number: 65003 s09-1096-rev. a, 15-jun-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max.) = 175 c, using junction-to-cas e thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area 0.1 100 1 1000 0.01 0.1 1ms 1 10 100 10 t c = 25 c single p u lse limited b yr ds(on) * b v dss limited 100 s 10 ms, dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 10 s power derating, junction-to-case 0 30 60 90 120 150 1 8 0 t c - case temperat u re (c) po w er ( w ) 0 25 50 75 100 125 150 175 current derating* 0 15 30 45 60 75 0 25 50 75 100 125 150 175 t c - case temperat u re (c) i d - drain c u rrent (a)
www.vishay.com 6 document number: 65003 s09-1096-rev. a, 15-jun-09 vishay siliconix SUP60N10-18P typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65003 . normalized thermal transient impedance, junction-to-case 1 0.1 0.01 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
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